Subscrib

Log In

Figure 12 from Air spacer for 10nm FinFET CMOS and beyond

Figure 12 from Air spacer for 10nm FinFET CMOS and beyond

Siliconica Just another Solid State Technology Sites site

Impact of MOL/BEOL Air-Spacer on Parasitic Capacitance and Circuit

Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era - ScienceDirect

Miniaturization of CMOS. - Abstract - Europe PMC

Scaling aligned carbon nanotube transistors to a sub-10 nm node

IEDM 2022 – TSMC 3nm - SemiWiki

a) 3D view of the bulk FinFET tri-gate structure, b) 3D cross section

Effect of air spacer on analog performance of underlap tri-gate FinFET - ScienceDirect

Figure 2 from An air spacer technology for improving short-channel immunity of MOSFETs with raised source/drain and high-/spl kappa/ gate dielectric

Micromachines, Free Full-Text

Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era - ScienceDirect

Next to FinFET, How Will ESD Suffer? - In Compliance Magazine

Micromachines, Free Full-Text

Typical STEM of 2a) Front End of Line Air Spacer Formation in 10

Figure 4 from Air spacer for 10nm FinFET CMOS and beyond